Download Chemical Vapor Deposition for Microelectronics: Principles, by Arthur Sherman PDF

By Arthur Sherman

Provides an in depth, finished research of chemical vapor deposition (CVD). knowing CVD calls for wisdom of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics in addition to homogenous and heterogeneous chemical reactions. this article offers those points of CVD in an built-in type, and likewise stories movies to be used in built-in circuit expertise.

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Extra resources for Chemical Vapor Deposition for Microelectronics: Principles, Technology and Applications (Materials Science and Process Technology)

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A2 . Clearly, there are many approximations in this model, so close agreement with experimental data should not be expected. It is interesting, however, to consider some relevant experimental data. 56-M Hz RF glow discharge confined within a reactor chamber with two electrodes of unequal area. Using a 52 Chemical Vapor Deposition for Microelectronics simpl ified theoretical model of the discharge, the authors derived values for the voltage on each electrode relative to the plasma potential, and could then calculate the voltage ratios from the measured data.

The Y distributions across the channel for a typical condition are shown in Figure 10. The YSiH2 exhibits a peak near the hot wall and is a fairly full profile. This can be attributed to the high diffusion coefficient at these pressures, which allows the Si H2 to readily diffuse toward the cold wall. Deposition on the cold wall is many times smaller than on the hot wall, as evidenced by the smaller value of dY SiH2 /dy there. Deposition rates as a function of hot wall temperature are presented in Figure 11 with pressure as the parameter, and Figure 12 with mass fraction as the parameter.

At the same time the films that form on the colder surfaces may be more porous than the normal film and may spall off more easily. All of which says that in spite of our best efforts, cold walled reactors may have their cold walls an undesirable source of particulates which may end up on the hot substrate. The occurence of such particulates can be minimized by frequent cleaning of the chamber walls to remove deposits. 1 Tube Reactor, Parallel Flow: A sketch of this reactor configuration is shown in Figure 17.

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